4011 NAND Gate are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain.All inputs are protected against static discharge with diodes to V_DD and V_SS.

Features of 4011 NAND Gate

• Propagation delay time = 60 ns (typ.) at C_L = 50 pF, V_DD = 10 V
• Buffered inputs and outputs
• Standardized symmetrical output characteristics
• Maximum input current of 1 µA at 18 V over-full package temperature range; 100 nA at 18 V and 25°C
• 100% tested for quiescent current at 20 V
• 5-V, 10-V, and 15-V parametric ratings
• Pin 7 is the negative supply
• Pin 14 is the positive supply
• Pins 1&2, 5&6, 8&9, 12&13 are gate inputs
• Pins 3, 4, 10, 11 are gate outputs
• Low power TTL compatibility
• Fan out of 2 driving 74L or 1 driving 74LS
• 5V±10V±15V parametric ratings
• Symmetrical output characteristics
• Maximum input leakage 1 mA at 15V over full temperature range
• This is a Thru-Hole Device.

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