Advanced IRF3710 MOSFET Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Applications:
- Consumer Full-Bridge
- Full-Bridge
- Push-Pull
Features:
Continuous Drain Current:57A at 25°C
Continuous Drain Current:40A at 100°C
Pulsed Drain Current:230W
Power Dissipation: 200 W
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