This IRF510 N Channel MOSFET enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.
FEATURES:
• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
You can buy more component as like
Reviews
There are no reviews yet.