IRF540 N Channel MOSFET Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Features of IRF540 N Channel MOSFET:
- Typical RDS(on) = 0.050 W
- Avalanche rugged technology
- 100% Avalanche tested
- Repetitive avalanche data at 100oc
- Low gate charge
- High current capability
- 175oC Operating temperature
- Application oriented characterization
APPLICATIONS
- High current, high speed switching
- Solenoid and relay drivers
- DC-DC& DC-AC converter
- Automotive environment (injection,abs, air-bag, lamp drivers etc.
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